Fabrication of (Al)GaN p-i-n Photodiodes

1.  Start with LP-MOCVD grown material	3. Both n (Ti/Au) and p-type (Ni/Au) contacts are deposited and patterned via negative lithography and liftoff
2.  After Mg activation (RTA), the samples are cleaned and mesas are etched via positive lithography and ECR etching