Highly Efficient GaN p-i-n Photodiodes

• • Previous work has indicated that the minority carrier diffusion length (of holes) in n-GaN is ~1000 Å.
• • Too thick a p-type region, we increase the chance for recombination in this layer.
• • Too thin a p-type region will result in a lack of p-n junction altogether, thereby reducing quantum efficiency.

Spectral Responsivity

Razeghi et al., APL 72, 3303 (1998).

• • Responsivity of 0.20 A/W at 362 nm (0 V)
• • Corresponding external quantum efficiency of 68.5% and internal quantum efficiency of 86%
• • High efficiency over the entire deep UV spectral range, with sharp cutoff (10⁵⁾